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: 8 absolute maximum ratings parameter description units v ces / v rrm igbt/diode blocking voltage v v + positive bus input voltage i o @ t c =25c rms phase current (note 1) i o @ t c =100c rms phase current (note 1) a i o pulsed rms phase current (note 2) f pwm pwm carrier frequency khz p d power dissipation per igbt @ tc =25c w v iso isolation voltage (1min) v rms t j (igbt & diodes) operating junction temperature range c t j (driver ic) operating junction temperature range t mounting torque range (m3 screw) nm values 5 15 20 450 600 10 0.5 to 1.0 27 -40 to +150 2000 -40 to +150

irams10up60b 2 www.irf.com internal electrical schematic - irams10up60b 23 vs1 24 ho1 25 vb1 1 vcc 2 hin1 3 hin2 4 hin3 5 lin1 lin2 6 lin3 7 f 8 itrip 9 en 10 rcin 11 vss 12 com 13 22 vb2 21 ho2 20 vs2 19 vb3 18 ho3 17 vs3 v - (12) vb1 (7) u, vs1 (8) vb2 (4) v, vs2 (5) vb3 (1) w, vs3 (2) v cc (14) v ss (23) driver ic lo1 16 lo3 14 lo2 15 i trip (22) hin1 (15) hin2 (16) hin3 (17) lin1 (18) lin2 (19) lin3 (20) v (10) + v th (13) thermistor flt-en(21)
irams10up60b www.irf.com 3 absolute maximum ratings (continued) symbol parameter min max units i bdf bootstrap diode peak forward current --- 4.5 a p br peak bootstrap resistor peak power (single pulse) --- 80 w v s1,2,3 high side floating supply offset voltage v b1,2,3 - 25 v b1,2,3 +0.3 v v b1,2,3 high side floating supply voltage -0.3 600 v v cc low side and logic fixed supply voltage -0.3 20 v v in, v en, v itrip input voltage lin, hin, en, i trip -0.3 lower of (v ss +15v) or v cc +0.3v v conditions t p = 10ms, t j = 150c, t c =100c t p =100s, t c =100c esr / erj series inverter section electrical characteristics @t j = 25c symbol parameter min typ max units v (br)ces collector-to-emitter breakdown voltage 600 --- --- v ? v (br)ces / ? t temperature coefficient of breakdown voltage --- 0.57 --- v/c --- 1.70 2.00 --- 2.00 2.40 --- 5 80 v in =5v, v + =600v --- 10 --- v in =5v, v + =600v, t j =150c --- 1.80 2.35 --- 1.30 1.70 i c =5a, t j =150c -- -- 1.25 --- --- 1.10 r br bootstrap resistor value --- 2 --- ? ? r br /r br bootstrap resistor tolerance --- --- 5 % i bus_trip current protection threshold (positive going) 13.1 --- 16.4 a conditions i ces zero gate voltage collector current a v ce(on) collector-to-emitter saturation voltage v v in =5v, i c =1.0ma (25c - 150c) t j =-40c to 125c see fig. 2 v in =5v, i c =250a v v bdfm bootstrap diode forward voltage drop v v fm diode forward voltage drop i c =5a, v cc =15v, t j =150c i c =5a, v cc =15v t j =25c t j =25c i c =5a i f =1a i f =1a, t j =150c
irams10up60b 4 www.irf.com inverter section switching characteristics @ t j = 25c symbol parameter min typ max units e on turn-on switching loss --- 200 235 e off turn-off switching loss --- 75 100 e tot total switching loss --- 275 335 e rec diode reverse recovery energy --- 15 25 t rr diode reverse recovery time --- 70 100 ns e on turn-on switching loss --- 300 360 e off turn-off switching loss --- 135 165 e tot total switching loss --- 435 525 e rec diode reverse recovery energy --- 30 40 t rr diode reverse recovery time --- 100 145 ns q g turn-on igbt gate charge --- 29 44 nc rbsoa reverse bias safe operating area scsoa short circuit safe operating area 10 --- --- s i csc short circuit collector current --- 47 --- a t j =150c, v p =600v, v + = 360v, v cc =+15v to 0v see ct2 t j =150c, v p =600v, t sc <10s v + = 360v, v ge =15v v cc =+15v to 0v see ct2 full square conditions i c =5a, v + =400v v cc =15v, l=2mh energy losses include "tail" and diode reverse recovery see ct1 i c =5a, v + =400v v cc =15v, l=2mh, t j =150c energy losses include "tail" and diode reverse recovery see ct1 j j i c =15a, v + =400v, v ge =15v t j =150c, i c =5a, v p =600v v + = 450v v cc =+15v to 0v see ct3 recommended operating conditions driver function symbol definition min max units v b1,2,3 high side floating supply voltage v s +12 v s +20 v s1,2,3 high side floating supply offset voltage note 4 450 v cc low side and logic fixed supply voltage 12 20 v itrip i trip input voltage v ss v ss +5 v in logic input voltage lin, hin v ss v ss +5 v v en logic input voltage en v ss v ss +5 v note 3: for more details, see ir21363 data sheet the input/output logic timing diagram is shown in figure 1. for proper operation the device should be used within the recommende conditions. all voltages are absolute referenced to com/i trip . the v s offset is tested with all supplies biased at 15v differential (note 3) v v note 4: logic operational for v s from com-5v to com+600v. logic state held for v s from com-5v to com-v bs . (please refer to dt97-3 for more details)
irams10up60b www.irf.com 5 static electrical characteristics driver function symbol definition min typ max units v inh , v enh logic "0" input voltage 3.0 --- --- v v inl , v enl logic "1" input voltage --- --- 0.8 v v ccuv+, v bsuv+ v cc and v bs supply undervoltage positive going threshold 10.6 11.1 11.6 v v ccuv-, v bsuv- v cc and v bs supply undervoltage negative going threshold 10.4 10.9 11.4 v v ccuvh, v bsuvh v cc and v bs supply undervoltage lock-out hysteresis --- 0.2 --- v v in,clamp input clamp voltage (hin, lin, i trip ) i in =10a 4.9 5.2 5.5 v i qbs quiescent v bs supply current v in =0v --- --- 165 a i qcc quiescent v cc supply current v in =0v --- --- 3.35 ma i lk offset supply leakage current --- --- 60 a i in+, i en+ input bias current v in =5v --- 200 300 a i in-, i en- input bias current v in =0v --- 100 220 a i trip+ i trip bias current v itrip =5v --- 30 100 a i trip- i trip bias current v itrip =0v --- 0 1 a v(i trip )i trip threshold voltage 440 490 540 mv v(i trip , hys) i trip input hysteresis --- 70 --- mv r on , flt fault output on resistance --- 50 100 ohm v bias (v cc , v bs1,2,3 )=15v, unless otherwise specified. the v in and i in parameters are referenced to com/i trip and are applicable to all six channels. (note 3) dynamic electrical characteristics driver only timing unless otherwise specified.) symbol parameter min typ max units conditions t on input to output propagation turn- on delay time (see fig.11) --- 590 --- ns t off input to output propagation turn- off delay time (see fig. 11) --- 700 --- ns t flin input filter time (hin, lin) 100 200 --- ns v in =0 & v in =5v t blt-trip i trip blancking time 100 150 ns v in =0 & v in =5v d t dead time (v bs =v dd =15v) 220 290 360 ns v bs =v cc =15v m t matchin g propa g ation delay time (on & off) --- 40 75 ns v cc = v bs = 15v, external dead time> 400ns t itrip i trip to six switch to turn-off propagation delay (see fig. 2) --- --- 1.75 s v cc =v bs = 15v, i c =10a, v + =400v --- 7.7 --- t c = 25c --- 6.7 --- t c = 100c v cc =v bs = 15v, i c =10a, v + =400v post i trip to six switch to turn-off clear time (see fig. 2) t flt-clr ms
irams10up60b 6 www.irf.com input-output logic level table flt- en i trip hin1,2,3 lin1,2,3 u,v,w 1001 v + 10100 1011off 11xxoff 0xxxoff ho lo u, v,w ic driver v + hin1,2,3 lin1,2,3 (15,16,17) (18,19,20) (8,5,2) thermal and mechanical characteristics symbol parameter min typ max units conditions r th(j-c) thermal resistance, per igbt --- 4.2 4.7 r th(j-c) thermal resistance, per diode --- 5.5 6.5 r th(c-s) thermal resistance, c-s --- 0.1 --- c d creepage distance 3.2 --- --- mm see outline drawings c/w flat, greased surface. heatsink compound thermal conductivity 1w/mk internal ntc - thermistor characteristics parameter definition min typ max units conditions r 25 resistance 97 100 103 k ? t c = 25c r 125 resistance 2.25 2.52 2.80 k ? t c = 125c b b-constant (25-50c) 4165 4250 4335 k r 2 = r 1 e [b(1/t2 - 1/t1)] temperature range -40 125 c typ. dissipation constant 1 mw/c t c = 25c internal current sensing resistor - shunt characteristics symbol parameter min typ max units conditions r shunt resistance 33.0 33.3 33.7 m ? t c = 25c t coeff temperature coefficient 0 --- 200 ppm/c p shunt power dissipation --- --- 2.2 w -40c< t c <100c t range temperature range -40 --- 125 c
irams10up60b www.irf.com 7 lin1,2,3 hin1,2,3 t fltclr 50% u,v,w i bus_trip 6 s 1 s i bus sequence of events: 1-2) current begins to rise 2) current reaches i bus_trip level 2-3) current is higher than i bus_trip for at least 6 s. this value is the worst-case condition with very low over-current. in case of high current (short circuit), the actual delay will be smaller. 3-4) delay between driver identification of over-current condition and disabling of all outputs 4) current starts decreasing, eventually reaching 0 5) current goes below i bus_trip , the driver starts its auto-reset sequence 6) driver is automatically reset and normal operatio n can resume (over-current condition must be removed by the time the drivers automatically resets itself) 3 4 2 1 5 6 note 5: the shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. figure 2. i trip timing waveform
irams10up60b 8 www.irf.com module pin-out description 1 23 pin name description 1 v b3 high side floating supply voltage 3 2 w,v s3 output 3 - high side floating supply offset voltage 3nanone 4 v b2 high side floating supply voltage 2 5 v,v s2 output 2 - high side floating supply offset voltage 6nanone 7 v b1 high side floating supply voltage 1 8 u, v s1 output 1 - high side floating supply offset voltage 9nanone 10 v + positive bus input voltage 11 na none 12 v - negative bus input voltage 13 v th temperature feedback 14 v cc +15v main supply 15 h in1 logic input high side gate driver - phase 1 16 h in2 logic input high side gate driver - phase 2 17 h in3 logic input high side gate driver - phase 3 18 l in1 logic input low side gate driver - phase 1 19 l in2 logic input low side gate driver - phase 2 20 l in3 logic input low side gate driver - phase 3 21 flt/enable fault output and enable pin 22 i trip current sense and itrip pin 23 v ss negative main supply
irams10up60b www.irf.com 9 typical application connection irams10up60b 1. electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and emi problems. additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor- mance. 2. in order to provide good decoupling between v cc -v ss and v b1,2,3 -v s1,2,3 terminals, the capacitors shown connected be- tween these terminals should be located very close to the module pins. additional high frequency capacitors, typically 0.1f, are strongly recommended. 3. value of the boot-strap capacitors depends upon the switching frequency. their selection should be made based on ir design tip dn 98-2a, application note an-1044 or figure 9. bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the v cc . (see maximum ratings table on page 3). 4. current sense signal can be obtained from pin 22 and pin 23. care should be taken to avoid having inverter current flowing through pin 22 to mantain required current measurement accuracy. 5. after approx. 8ms the fault is reset. (see dynamic characteristics table on page 5). 6. pwm generator must be disabled within fault duration to garantee shutdown of the system, overcurrent condition must be cleared before resuming operation. 7. fault/enable pin must be pulled-up to +5v. hin2 hin3 lin1 lin2 lin3 hin1 date code lot # 23 irams10up60b 1 3-phase ac motor boot-strap capacitors u v w v cc (15 v) i trip v ss controller v + dc bus capacitors temp monitor fault 10mf 0.1mf 2.2f fault/enable 1k +5v 47kohm +5v +15v v - v th v b3 v b2 v b1 +5v v s3 v s2 v s1 pgnd dgnd dgnd
irams10up60b 10 www.irf.com figure 3. maximum sinusoidal phase current vs. pwm switching frequency v + =400v , t j =150c, modulation depth=0.8, pf=0.6 figure 4. maximum sinusoidal phase current vs. modulation frequency v + =400v, t j =150c, t c =100c, modulation depth=0.8, pf=0.6 11 01 0 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 t j = 150c sinusoidal modulation maximum output phase rms current - a modulation frequency - hz f pwm = 20khz f pwm = 16khz f pwm = 12khz 0 2 4 6 8 101214161820 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 t j = 150c sinusoidal modulation maximum output phase rms current - a pwm frequency - khz t c = 100c t c = 110c t c = 120c
irams10up60b www.irf.com 11 figure 5. total power losses vs. pwm switching frequency, sinusoidal modulation v + =400v , t j =150c, modulation depth=0.8, pf=0.6 figure 6. total power losses vs. output phase current, sinusoidal modulation v bus =400v , t j =150c, modulation depth=0.8, pf=0.6 0 2 4 6 8 101214161820 0 10 20 30 40 50 60 70 total power losses - w pwm switching frequency - khz i out = 6 a rms i out = 5 a rms i out = 4 a rms t j = 150c sinusoidal modulation 012345678 0 10 20 30 40 50 60 70 80 t j = 150c sinusoidal modulation total power losses - w output phase current - a rms f pwm = 12 khz f pwm = 16 khz f pwm = 20 khz
irams10up60b 12 www.irf.com figure 7. maximum allowable case temperature vs. output rms current per phase figure 8. estimated maximum igbt junction temperature vs. thermistor temperature 012345678 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 t j = 150c sinusoidal modulation maximum allowable case temperature -c output phase current - a rms f pwm = 12 khz f pwm = 16 khz f pwm = 20 khz 65 70 75 80 85 90 95 100 105 110 115 100 110 120 130 140 150 160 t j avg. = 1.2363 x t therm + 26.2775 igbt junction temperature - c internal thermistor temperature equivalent read out - c
irams10up60b www.irf.com 13 figure 10. recommended bootstrap capacitor value vs. switching frequency figure 9. thermistor readout vs. temperature (47kohm pull-up resistor, 5v) and nominal thermistor resistance values vs. temperature table. 0 5 10 15 20 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 3.3f 6.8f r bs d bs c bs r g1 r g2 v s h o l o co m v b v cc h in l in +15v v ss v + h in l in u,v,w gnd v ss 2.2f 4.7f recommended bootstrap capacitor - f pwm frequency - khz 15f -40-40 -30 -20 -20 -10 0 01020 20 30 40 40 50 60 60 70 80 80 90 100 100 110 120120 130 0.00.0 0.5 1.01.0 1.5 2.02.0 2.5 3.03.0 3.5 4.04.0 4.5 5.05.0 +5 v v the rm r therm r ext thermistor pin read-out voltage - v thermistor temperature - c min avg. max t therm r therm t therm r therm t therm r therm c ? c ? c ? -40 4397119 25 100000 90 7481 -35 3088599 30 79222 95 6337 -30 2197225 35 63167 100 5384 -25 1581881 40 50677 105 4594 -20 1151037 45 40904 110 3934 -15 846579 50 33195 115 3380 -10 628988 55 27091 120 2916 -5 471632 60 22224 125 2522 0 357012 65 18322 130 2190 5 272500 70 15184 135 1907 10 209710 75 12635 140 1665 15 162651 80 10566 145 1459 20 127080 85 8873 150 1282
irams10up60b 14 www.irf.com figure 11. switching parameter definitions figure 11a. input to output propagation turn-on delay time figure 11b. input to output propagation turn-off delay time figure 11c. diode reverse recovery 50% h in /l in v ce i c h in /l in t off t f 90% i c 10% i c 50% v ce v ce i c h in /l in t on t r 50% h in /l in 90% i c 10% i c 50% v ce v ce i f h in /l in t rr i rr
irams10up60b www.irf.com 15 figure ct1. switching loss circuit figure ct2. s.c.soa circuit figure ct3. r.b.soa circuit ho lo u,v,w ic driver v + lin1,2,3 5v hin1,2,3 ho lo u,v,w ic driver v + lin1,2,3 hin1,2,3 in 10k 1k 5vzd v cc i o ho lo u,v,w ic driver v + lin1,2,3 hin1,2,3 in 10k 1k 5vzd v cc i o i n i o i n i o i n i o
irams10up60b 16 www.irf.com standard pin leadforming option notes: dimensions in mm 1- marking for pin 1 identification 2- product part number 3- lot and date code marking 4- tollerances 0.5mm, unless otherwise stated for mounting instruction, see an1049 027-e2d24 irams10up60b note 1 note 2 note 3 package outline
irams10up60b www.irf.com 17 data and specifications are subject to change without notice ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information 01/08 package outline for mounting instruction see an-1049 pin leadforming option -2 notes: dimensions in mm 1- marking for pin 1 identification 2- product part number 3- lot and date code marking 4- tollerances 0.5mm, unless otherwise stated 027-e2d24 note 1 irams10up60b-2 note 2 note 3

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